| 2024-01 |
Ag-dispersive chalcogenide media for readily activated electronic memristor |
Applied Surface Science
|
| 2023-12 |
Optimized chalcogenide medium for inherently activated resistive switching device |
Applied Surface Science
|
| 2023-08 |
Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
Advanced Electronic Materials
|
| 2023-07 |
Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO3−x) Thin Films |
Materials
|
| 2023-03 |
Locally formed conductive filaments in an amorphous Ga2Te3ovonic threshold switching device |
AIP Advances
|
| 2022-12 |
Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition |
Journal of Alloys and Compounds
|
| 2022-11 |
Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition |
Journal of Materials Chemistry C
|
| 2022-08 |
Ultralow dielectric cross-linked silica aerogel nanocomposite films for interconnect technology |
Applied Materials Today
|
| 2022-08 |
Impact of Ag doping on subthreshold conduction in amorphous Ga2Te3 with threshold switching |
JOURNAL OF ALLOYS AND COMPOUNDS
|
| 2022-07 |
Reset First Resistive Switching in Ni1-xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering |
Nanomaterials
|
| 2022-03 |
Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film |
Applied Materials Today
|
| 2021-09 |
Electroforming and threshold switching characteristics of NbOx films with crystalline NbO2 phase |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2021-08 |
Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays |
Nanoscale Research Letters
|
| 2021-04 |
Negative Differential Resistance Characteristics in Forming-Free NbOx with Crystalline NbO2 Phase |
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
|
| 2020-12 |
Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga2Te3 Thin Films |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2020-10 |
Effect of Nitrogen Doping on Threshold Voltage in Amorphous Ga(2)Te(3)for Application of Selector Devices |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2020-09 |
Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x |
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
|
| 2020-05 |
Firing voltage reduction in thermally annealed Ge–As–Te thin film with ovonic threshold switching |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2020-05 |
Ti-doped alumina based reliable resistive switching in sub-mu A regime |
APPLIED PHYSICS LETTERS
|
| 2020-04 |
Trap-controlled space-charge-limited conduction in amorphous AsxTe1-x thin films with ovonic threshold switching |
APPLIED PHYSICS EXPRESS
|
| 2020-03 |
Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation |
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
|
| 2019-12 |
Positive effects of a Schottky-type diode on unidirectional resistive switching devices |
APPLIED PHYSICS LETTERS
|
| 2019-08 |
Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering |
APPLIED PHYSICS EXPRESS
|
| 2019-07 |
Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System |
KOREAN JOURNAL OF METALS AND MATERIALS
|
| 2019-03 |
Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering |
NANOTECHNOLOGY
|
| 2018-03 |
Effect of interfacial SiO2?y layer and defect in HfO2?x film on flat-band voltage of HfO2?x/SiO2?y stacks for backside-illuminated CMOS image sensors |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2018-01 |
Surface Roughening of Undoped and In situ B-doped SiGe Epitaxial Layers Deposited by Using Reduced Pressure Chemical Vapor Deposition |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2017-10 |
Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks |
CURRENT APPLIED PHYSICS
|
| 2017-09 |
Effect of composition in Si<inf>1-x</inf>Ge<inf>x</inf> seed layer on the solid phase crystallization of ultrathin amorphous silicon layer |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2017-07 |
Influence of Si precursor type on the surface roughening of SiGe epitaxial layers deposited by ultrahigh vacuum chemical vapor deposition method |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2016-03 |
Effect of (HfO2)(X)(Al2O3)(1-X)/SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2015-09 |
Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition |
THIN SOLID FILMS
|
| 2015-05 |
Emulation of spike-timing dependent plasticity in nano-scale phase change memory |
NEUROCOMPUTING
|
| 2015-05 |
Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2014-09 |
The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2014-05 |
RESET-first unipolar resistance switching behavior in annealed Nb2O5 films |
THIN SOLID FILMS
|
| 2014-02 |
Effect of crystallinity on the resistive switching behavior of HfAlO (x) films |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2013-12 |
RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films |
Microelectronic Engineering
|
| 2013-11 |
Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks |
MATERIALS CHEMISTRY AND PHYSICS
|
| 2013-10 |
Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels |
Microelectronic Engineering
|
| 2013-09 |
Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2013-07 |
Performance improvement of metal-Al2O3-HfO2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2013-05 |
Effect of chemical bonding states in TaO x base layers on rectifying bipolar resistive switching characteristics |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2012-09 |
Physical and electrical properties of band-engineered SiO2/(TiO2) (x) (SiO2)(1-x) stacks for nonvolatile memory applications |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2012-08 |
Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress |
THERMOCHIMICA ACTA
|
| 2012-07 |
Anisotropic mobility of small molecule-polymer blend channel in organic transistor: Characterization of channel materials and orientation |
Organic Electronics
|
| 2012-05 |
Change of Resistive-switching in TiO2 Films with Additional HfO2 Thin Layer |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2012-04 |
High-mobility Property of Crystallized In-Te Chalcogenide Materials |
ELECTRONIC MATERIALS LETTERS
|
| 2011-09 |
Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity |
THIN SOLID FILMS
|
| 2011-06 |
Interfacial reaction induced phase separation in LaxHfyO films |
JOURNAL OF APPLIED PHYSICS
|
| 2011-06 |
Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films |
THIN SOLID FILMS
|
| 2011-05 |
A study of surface-coated SiC whiskers on carbon fiber substrates and their properties for diesel particulate filter applications |
Ceramics International
|
| 2011-04 |
Effects of Nitrogen on Endurance of N-doped Ge2Sb2Te5 Films During Laser-Induced Reversible Switching |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-04 |
Comparison of the Crystallization Behaviors in As-Deposited and Melt-Quenched N-Doped Ge2Sb2Te5 Thin Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-04 |
Phase-Change Memory in Bi2Te3 Nanowires |
ADVANCED MATERIALS
|
| 2011-03 |
Effect of W impurity on resistance switching characteristics of NiOx films |
Current Applied Physics
|
| 2011-03 |
Enhanced tunneling properties of band-engineered (HfO2)(x)(SiO2)(1-x)/SiO2 double dielectric layers for non-volatile flash memory device |
Current Applied Physics
|
| 2011-03 |
Enhanced bipolar resistive switching of HfO2 with a Ti interlayer |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2011-02 |
Anion-Migration-Induced Bipolar Resistance Switching in Electrochemically Deposited TiOx Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2010-12 |
Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2010-11 |
Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-11 |
Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-10 |
Effect of Bonding Characteristics on the Instability of GexSb1-x Films |
Journal of The Electrochemical Society
|
| 2010-09 |
High current fast switching n-ZnO/p-Si diode |
Journal of Physics D-Applied Physics
|
| 2010-06 |
Enhancement of Thermal Stability in Ni Silicides on Epi-Si1-xCx by Pt Addition |
Journal of The Electrochemical Society
|
| 2010-06 |
TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-06 |
The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film |
Journal of The Electrochemical Society
|
| 2010-03 |
Study on the Structural Stability and Charge Trapping Properties of High-k HfO2 and HFO2/Al2O3/HfO2 Stacks |
KOREAN JOURNAL OF METALS AND MATERIALS
|
| 2010-03 |
Effect of Doped Nitrogen on the Crystallization Behaviors of Ge2Sb2Te5 |
Journal of The Electrochemical Society
|
| 2010-02 |
The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture |
Applied Physics Letters
|
| 2010-02 |
Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure |
Applied Physics Letters
|
| 2010-02 |
Behavior of Strain at a Thin Ge Pile-up Layer Formed by Dry Oxidation of a Si0.7Ge0.3 Film |
Thin Solid Films
|
| 2010-01 |
Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-01 |
Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier |
Current Applied Physics
|
| 2010-01 |
Crystallization Behaviors of Laser induced Ge2Sb2Te5 in Different Amorphous State |
Journal of The Electrochemical Society
|
| 2009-06 |
Effect of Deposition Temperature and Niobium Doping on Resistive Switching Properties of the Polycrystalline NiOx Films |
Journal of the Electrochemical Society
|
| 2009-04 |
Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2 |
Electrochemical And Solid State Letters
|
| 2009-04 |
Improvement of the Diffusion Barrier Performance of Ru by Incorporating a WNx Thin Film for Direct-Plateable Cu Interconnects |
Electrochemical And Solid State Letters
|
| 2008-12 |
Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx |
Materials Science And Engineering B-Advanced Functional Solid-State Materials
|
| 2008-06 |
A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu |
Journal of the Electrochemical Society
|
| 2008-03 |
Diffusion barriers between Al and Cu for the Cu interconnect of memory devices |
Electrochemical and Solid State Letters
|
| 2008-03 |
Adsorptive desulfurization and denitrogenation of refinery fuels using mesoporous silica adsorbents |
Chemsuschem
|
| 2008-02 |
Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex |
Electrochemical and Solid State Letters
|
| 2008-01 |
Phase and microstructure of ALD-W films deposited using B2H6 and WF6 and their effects on CVD-W growth |
Journal of the Electrochemical Society
|
| 2008-01 |
Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films |
Applied Physics Letters
|
| 2007-10 |
Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2007-09 |
Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2007-06 |
Characteristics of ALD tungsten nitride using B |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2006-05 |
Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2006-01 |
A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2005-05 |
Characterizations of pulsed chemical vapor deposited-tungsten thin films for ultrahigh aspect ratio W-plug process |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2005-05 |
Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W/WNx/poly-Si gate MOSFET for high density DRAM applications |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2005-04 |
Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 angstrom on Ru metal electrode |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|