| 2005-04 |
Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 angstrom on Ru metal electrode |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2005-04 |
Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-12 |
Physical and electrical characteristics of physical vapor-deposited tungsten for bit line process |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-09 |
(Bi,La)(4)Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices |
APPLIED PHYSICS LETTERS
|
| 2004-08 |
Effects of ceric ammonium nitrate (CAN) additive in HNO3 solution on the electrochemical behaviour of ruthenium for CMP processes |
JOURNAL OF APPLIED ELECTROCHEMISTRY
|
| 2004-05 |
Preparation of platinum thin films by metalorganic chemical vapor deposition using oxygen-assisted decomposition of (ethylcyclopentadienyl)trimethylplatinum |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
|
| 2004-05 |
Effects of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O-3 thin films on structural Stabilities of hybrid Pt/lrO(2)/lr stack and single-layer Ir bottom electrodes |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-04 |
Properties of Ru thin films fabricated on TiN by metal-organic chemical vapor deposition |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-04 |
Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-04 |
Effect of selective oxidation conditions on defect generation in gate oxide |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
| 2004-01 |
Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2004-01 |
Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O-2/NF3 chemistry |
JOURNAL OF APPLIED PHYSICS
|